Heteroepitaxial Growth of T-Nb2O5 on SrTiO3
نویسندگان
چکیده
منابع مشابه
Anatomy of vertical heteroepitaxial interfaces reveals the memristive mechanism in Nb2O5-NaNbO3 thin films
Dynamic oxygen vacancies play a significant role in memristive switching materials and memristors can be realized via well controlled doping. Based on this idea we deposite Nb₂O₅-NaNbO₃ nanocomposite thin films on SrRuO₃-buffered LaAlO₃ substrates. Through the spontaneous phase separation and self-assembly growth, two phases form clear vertical heteroepitaxial nanostructures. The interfaces bet...
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ژورنال
عنوان ژورنال: Nanomaterials
سال: 2018
ISSN: 2079-4991
DOI: 10.3390/nano8110895